Metrology methods are provided, which comprise identifying overlay critical patterns in a device design, the overlay critical patterns having an overlay sensitivity to process variation above a specified threshold that depends on design specifications; and using metrology targets that correspond to the identified overlay critical patterns. Alternatively or complementarily, metrology methods comprise identifying yield critical patterns according to a corresponding process window narrowing due to specified process variation, wherein the narrowing is defined by a dependency of edge placement errors (EPEs) of the patterns on process parameters. Corresponding targets and measurements are provided.