Invention Grant
- Patent Title: Paste for ohmic contact to P-type semiconductor and method for forming ohmic contact to P-type semiconductor using the same
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Application No.: US15990824Application Date: 2018-05-29
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Publication No.: US10685762B2Publication Date: 2020-06-16
- Inventor: Ji-Won Choi , Jin Sang Kim , Chong Yun Kang , Seong Keun Kim , Seung Hyub Baek , Sang Tae Kim , Won Jae Lee , Narendra Singh Parmar , Young-Shin Lee
- Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
- Applicant Address: KR Seoul
- Assignee: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
- Current Assignee: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
- Current Assignee Address: KR Seoul
- Agency: Cantor Colburn LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@64d7185a
- Main IPC: H01B1/22
- IPC: H01B1/22 ; H01L29/20 ; H01L21/288 ; H01L21/285 ; H01L29/45 ; C08L29/04 ; C08K3/22
Abstract:
The present disclosure relates to a paste for ohmic contact to p-type semiconductor, including a metal oxide and a binder, wherein the metal oxide is a rhenium oxide or a molybdenum oxide.
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