Invention Grant
- Patent Title: Semiconductor device including a Fin-FET and method of manufacturing the same
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Application No.: US15665230Application Date: 2017-07-31
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Publication No.: US10685884B2Publication Date: 2020-06-16
- Inventor: Yasutoshi Okuno , Cheng-Yi Peng , Ziwei Fang , I-Ming Chang , Akira Mineji , Yu-Ming Lin , Meng-Hsuan Hsiao
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L29/66 ; H01L29/78 ; H01L21/203 ; H01L27/092 ; H01L21/8238 ; H01L29/165 ; H01L27/12 ; H01L21/84 ; H01L29/161
Abstract:
A semiconductor device includes a field effect transistor (FET). The FET includes a channel region and a source/drain region disposed adjacent to the channel region. The FET also includes a gate electrode disposed over the channel region. The FET is an n-type FET and the channel region is made of Si. The source/drain region includes an epitaxial layer including Si1-x-yM1xM2y, where M1 is one or more of Ge and Sn, and M2 is one or more of P and As, and 0.01≤x≤0.1.
Public/Granted literature
- US20190035691A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2019-01-31
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