发明授权
- 专利标题： Process of forming high electron mobility transistor (HEMT) and HEMT formed by the same
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申请号： US16127896申请日： 2018-09-11
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公开(公告)号： US10686053B2公开(公告)日： 2020-06-16
- 发明人: Tadashi Watanabe , Hajime Matsuda
- 申请人： SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
- 申请人地址： JP Kanagawa
- 专利权人： SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
- 当前专利权人： SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
- 当前专利权人地址： JP Kanagawa
- 代理机构： Smith, Gambrell & Russell, LLP.
- 优先权： com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@5beacd11
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L29/778 ; H01L21/02 ; H01L21/3213 ; H01L21/285 ; H01L29/47 ; H01L21/311 ; H01L29/20 ; H01L29/423
摘要：
A high electron mobility transistor (HEMT) includes a semiconductor layer on a substrate; an insulating film on the semiconductor layer; a gate electrode in contact with a surface of the semiconductor layer through an opening in the insulating film; and a conductive film provided between the insulating film and a portion of the gate electrode at peripheries of the opening. The insulating film and the conductive film are made of respective materials containing silicon (Si). The gate electrode includes a Schottky metal in contact with the semiconductor layer and a cover metal provided on the Schottky metal. The Schottky metal covers the conductive film thereunder.
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