Invention Grant
- Patent Title: Semiconductor device and method to fabricate the semiconductor device
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Application No.: US16212362Application Date: 2018-12-06
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Publication No.: US10692758B1Publication Date: 2020-06-23
- Inventor: Da-Jun Lin , Bin-Siang Tsai , Chich-Neng Chang
- Applicant: United Microelectronics Corp.
- Applicant Address: TW Hsinchu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Hsinchu
- Agency: J.C. Patents
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/522 ; H01L23/528 ; H01L23/532
Abstract:
A structure of semiconductor device includes a substrate, having a dielectric layer on top. The structure further includes at least two metal elements being adjacent, disposed in the dielectric layer, wherein an air gap is existing between the two metal elements. A porous dielectric layer is disposed over the substrate, sealing the air gap. An inter-layer dielectric layer disposed on the porous dielectric layer.
Public/Granted literature
- US20200185264A1 SEMICONDUCTOR DEVICE AND METHOD TO FABRICATE THE SEMICONDUCTOR DEVICE Public/Granted day:2020-06-11
Information query
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