Invention Grant
- Patent Title: Semiconductor structure and method for manufacturing the same
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Application No.: US15860565Application Date: 2018-01-02
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Publication No.: US10692760B2Publication Date: 2020-06-23
- Inventor: Hung-Chang Sun , Po-Chin Chang , Akira Mineji , Zi-Wei Fang , Pinyen Lin
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/532 ; H01L23/535 ; H01L21/8234 ; H01L27/088
Abstract:
A method for manufacturing a semiconductor structure is provided. The method includes following steps. A MEOL structure is formed on an etch stop layer. A patterned masking layer with at least one opening is formed on the MEOL structure and a first etching process is performed to form a trench in the MEOL structure. A second etching process is performed to modify at least one sidewall of the trench.
Public/Granted literature
- US20190164820A1 SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2019-05-30
Information query
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