Invention Grant
- Patent Title: Semiconductor apparatus
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Application No.: US16281162Application Date: 2019-02-21
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Publication No.: US10692982B2Publication Date: 2020-06-23
- Inventor: Takashi Yamada
- Applicant: Murata Manufacturing Co., Ltd.
- Applicant Address: JP Kyoto
- Assignee: MURATA MANUFACTURING CO., LTD.
- Current Assignee: MURATA MANUFACTURING CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: Pearne & Gordon LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@1a08159c
- Main IPC: H03F1/32
- IPC: H03F1/32 ; H01L29/417 ; H03F3/195 ; H03F3/213 ; H01L29/737 ; H03F1/56 ; H03F1/26 ; H03F3/24

Abstract:
A semiconductor apparatus includes the following elements. A substrate includes a ground portion to which a ground potential is supplied. A semiconductor chip is mounted on the substrate and includes first and second output terminals, a first terminator, and a ground terminal. First and second amplifiers are respectively formed in first and second regions of the semiconductor chip and respectively amplify first and second input signals of first and second frequency bands and output first and second amplified signals from the first and second output terminals via first and second output wires. A first harmonic termination circuit includes a first wire which electrically connects the first terminator and the ground portion. A ground wire is disposed between the first wire and the second output wire in a plan view of a main surface of the semiconductor chip and electrically connects the ground terminal and the ground portion.
Public/Granted literature
- US20190312115A1 SEMICONDUCTOR APPARATUS Public/Granted day:2019-10-10
Information query
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