A CVD apparatus includes a process chamber, a susceptor, an auxiliary supporting part, a gas spray part, and a shadow frame. The susceptor may be in the process chamber to support and heat a mother substrate. The auxiliary supporting part may be mounted on the susceptor in a tetragonal frame form to support and heat an edge of the mother substrate supported by the susceptor. The gas spray part may be in the process chamber to face the susceptor and may spray a process gas to the mother substrate. The shadow frame may cover an edge of the auxiliary supporting part and an edge of the susceptor extending from the edge of the auxiliary supporting part.