Invention Grant
- Patent Title: Wideband low noise amplifier having DC loops with back gate biased transistors
-
Application No.: US15959514Application Date: 2018-04-23
-
Publication No.: US10700653B2Publication Date: 2020-06-30
- Inventor: Konstantinos Manetakis , Thomas G. McKay
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Gibb & Riley, LLC
- Agent David A. Cain, Esq.
- Main IPC: H03F3/04
- IPC: H03F3/04 ; H03F3/45

Abstract:
Methods form amplifier device structures that include first-third amplifier devices. The first amplifier device produces an intermediate signal. The second amplifier device is connected to an input of the first amplifier device and produces an amplified inverted output signal. The third amplifier device inverts the intermediate signal to produce an amplified non-inverted output signal that is complementary to the amplified inverted output signal. A resistor feedback loop is connected to the input and output of the first amplifier device. A gain ratio of the gain of the third amplifier device to the gain of the second amplifier device matches a resistance ratio of the source resistance of the input signal to the resistance of the resistor added to the source resistance. Also, DC loop circuits are connected to the first-third amplifier devices, and each of the DC loop circuits connects an amplifier device output to an amplifier device input.
Public/Granted literature
- US20190326866A1 WIDEBAND LOW NOISE AMPLIFIER HAVING DC LOOPS WITH BACK GATE BIASED TRANSISTORS Public/Granted day:2019-10-24
Information query