Invention Grant
- Patent Title: Aluminum nitride single crystal
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Application No.: US16067923Application Date: 2016-12-21
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Publication No.: US10704162B2Publication Date: 2020-07-07
- Inventor: Yosuke Iwasaki , Keiichiro Nakamura
- Applicant: JFE MINERAL COMPANY, LTD
- Applicant Address: JP Minato-ku, Tokyo
- Assignee: JFE MINERAL COMPANY, LTD
- Current Assignee: JFE MINERAL COMPANY, LTD
- Current Assignee Address: JP Minato-ku, Tokyo
- Agency: Kenja IP Law PC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@6b73aaa8
- International Application: PCT/JP2016/088193 WO 20161221
- International Announcement: WO2017/119305 WO 20170713
- Main IPC: C30B29/40
- IPC: C30B29/40 ; H01L21/02 ; H01L29/20
Abstract:
Provided is an aluminum nitride single crystal which is easier to cut than conventional ones. The presently disclosed aluminum nitride single crystal 1 has a matrix region M constituting a matrix of the aluminum nitride single crystal, and at least one domain region D included in the matrix region M.
Public/Granted literature
- US20190186044A1 ALUMINUM NITRIDE SINGLE CRYSTAL Public/Granted day:2019-06-20
Information query
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