Methods, systems, and devices for memory array operation are described. A series of pulses may be applied to a fatigued memory cell to improve performance of memory cell. For example, a ferroelectric memory cell may enter a fatigue state after a number of access operations are performed at an access rate. After the number of access operations have been performed at the access rate, a fatigue state of the ferroelectric memory cell may be identified and the series of pulses may be applied to the ferroelectric capacitor at a different (e.g., higher) rate. For instance, a delay between pulses of the series of pulses may be shorter than the delay between access operations of the ferroelectric memory cell.