Invention Grant
- Patent Title: Semiconductor device having interconnection structure
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Application No.: US16751744Application Date: 2020-01-24
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Publication No.: US10707126B2Publication Date: 2020-07-07
- Inventor: Dohyun Lee , Youngwoo Park , Junghoon Park , Jaeduk Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@390018c2
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/768 ; H01L23/532 ; H01L23/522 ; H01L27/11582 ; H01L27/11575 ; H01L27/11573 ; H01L27/1157 ; H01L23/528

Abstract:
A semiconductor device includes a semiconductor pattern on a semiconductor substrate, a three-dimensional memory array on the semiconductor pattern, and a peripheral interconnection structure between the semiconductor pattern and the semiconductor substrate. The peripheral interconnection structure includes an upper interconnection structure on a lower interconnection structure. The upper interconnection structure includes an upper interconnection and an upper barrier layer. The lower interconnection structure includes a lower interconnection and a lower barrier layer. The upper barrier layer is under a bottom surface of the upper interconnection and does not cover side surfaces of the upper interconnection. The lower barrier layer is under a bottom surface of the lower interconnection and covers side surfaces of the lower interconnection.
Public/Granted literature
- US20200161179A1 SEMICONDUCTOR DEVICE HAVING INTERCONNECTION STRUCTURE Public/Granted day:2020-05-21
Information query
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