An aspect of the invention includes a method for forming a contact in a dielectric layer over a semiconductor substrate. The method may comprise: forming a contact opening in a dielectric layer over the semiconductor substrate to expose an upper portion of the semiconductor substrate; depositing a first liner layer to conformally coat the contact opening; causing a portion of the first liner layer to diffuse into the upper portion of the semiconductor substrate to form a first intermix region at the upper portion of the semiconductor substrate; depositing a refractory metal layer over the first intermix region; and depositing a metal in the contact opening thereby forming the contact.