Invention Grant
- Patent Title: Semiconductor devices
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Application No.: US16152625Application Date: 2018-10-05
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Publication No.: US10707254B2Publication Date: 2020-07-07
- Inventor: Taeyon Lee , Gwideokryan Lee , Myungwon Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Myers Bigel, P.A.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@2d53a304
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
Semiconductor devices are provided. The semiconductor devices may include a substrate, a device isolation pattern in the substrate to electrically isolate a first pixel and a second pixel from each other, a conductive pattern in the device isolation pattern, and a doping layer on a side surface of the device isolation pattern. The doping layer may have a conductivity type different from a conductivity type of the substrate.
Public/Granted literature
- US20190043902A1 SEMICONDUCTOR DEVICES Public/Granted day:2019-02-07
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