Certain aspects of the present disclosure generally relate to a transistor having an implant region for reducing a net doping concentration below an edge of a gate region of the transistor. One example transistor generally includes a first semiconductor region, a second semiconductor region, and a third semiconductor region, the first semiconductor region being between and having a different doping type than the second semiconductor region and the third semiconductor region. In certain aspects, the transistor also includes a gate dielectric layer disposed above the first semiconductor region, a non-insulative region disposed above the gate dielectric layer, and an implant region disposed above the second semiconductor region, the implant region having a different doping type than the second semiconductor region.