发明授权
- 专利标题: Power amplifying apparatus with asymmetrical amplification structure and linearity
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申请号: US16161236申请日: 2018-10-16
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公开(公告)号: US10707820B2公开(公告)日: 2020-07-07
- 发明人: Kyu Jin Choi , Jae Hyouck Choi
- 申请人: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- 申请人地址: KR Suwon-si
- 专利权人: Samsung Electro-Mechanics Co., Ltd.
- 当前专利权人: Samsung Electro-Mechanics Co., Ltd.
- 当前专利权人地址: KR Suwon-si
- 代理机构: NSIP Law
- 优先权: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@47d64801
- 主分类号: H03F3/38
- IPC分类号: H03F3/38 ; H03F3/21 ; H03G3/30 ; H03F1/02 ; H03F1/32
摘要:
A power amplifying apparatus includes a first bias circuit that generates a first bias current having a first magnitude, a first amplification circuit connected between a first node and a second node, and that receives the first bias current, amplifies a signal input through the first node, and outputs a first amplified signal to the second node, a second bias circuit that generates a second bias current having a second magnitude that is different from the first magnitude of the first bias current, and a second amplification circuit connected in parallel with the first amplification circuit between the first node and the second node, and that receives the second bias current, amplifies the signal input through the first node, and outputs a second amplified signal to the second node, wherein the second amplification circuit may have a size that is different from a size of the first amplification circuit.
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