- 专利标题： Method for fabricating contact plug in dynamic random access memory
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申请号： US16172845申请日： 2018-10-28
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公开(公告)号： US10714480B2公开(公告)日： 2020-07-14
- 发明人: Feng-Yi Chang , Fu-Che Lee
- 申请人： UNITED MICROELECTRONICS CORP. , Fujian Jinhua Integrated Circuit Co., Ltd.
- 申请人地址： TW Hsin-Chu CN Quanzhou, Fujian Province
- 专利权人： UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- 当前专利权人： UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- 当前专利权人地址： TW Hsin-Chu CN Quanzhou, Fujian Province
- 代理商 Winston Hsu
- 优先权： com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@2f61255d
- 主分类号： H01L27/108
- IPC分类号： H01L27/108 ; H01L23/535
摘要：
A method for fabricating a semiconductor device includes the following steps. First, a contact structure is formed in the insulating layer. Preferably, the contact structure includes a bottom portion in part of the insulating layer and a top portion on part of the bottom portion and extending to cover part of the insulating layer. Next, a dielectric layer is formed on the bottom portion and the top portion, part of the dielectric layer is removed to form a first opening exposing part of the top portion and part of the bottom portion, and a capacitor is formed in the first opening and contacting the pad portion and the contact portion directly.
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