Invention Grant
- Patent Title: Power semiconductor circuit having a field effect transistor with low energy losses
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Application No.: US15199969Application Date: 2016-06-30
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Publication No.: US10715055B2Publication Date: 2020-07-14
- Inventor: Gunter Koenigsmann , Thomas Eck
- Applicant: Semikron Elektronik GmbH & Co., KG
- Applicant Address: DE Nürnberg
- Assignee: Semikron Elektronik GmbH & Co., KG
- Current Assignee: Semikron Elektronik GmbH & Co., KG
- Current Assignee Address: DE Nürnberg
- Agency: The Law Office of Roger S. Thompson
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@562c5e48
- Main IPC: H02M1/32
- IPC: H02M1/32 ; H02M7/5387 ; H03K17/082 ; G01R19/165

Abstract:
A power semiconductor circuit comprising a field effect transistor having a drain, a source and a gate as terminals, and further comprising a control device having a drive device and an undervoltage detection circuit. The drive device drives the field effect transistor and is electrically connected to the gate of the field effect transistor. The undervoltage detection circuit generates an undervoltage detection signal if a power semiconductor voltage present between the drain and the source of the field effect transistor falls below a specific voltage value. The drive device switches on the field effect transistor when a switch-on command for switching on the field effect transistor and the undervoltage detection signal are present. The invention provides a power semiconductor circuit with low energy loss.
Public/Granted literature
- US20170005594A1 Power Semiconductor Circuit having a Field Effect Transistor Public/Granted day:2017-01-05
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