Invention Grant
- Patent Title: Plasma processing apparatus and plasma processing method
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Application No.: US15284668Application Date: 2016-10-04
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Publication No.: US10727088B2Publication Date: 2020-07-28
- Inventor: Michikazu Morimoto , Yasuo Ohgoshi , Yuuzou Oohirabaru , Tetsuo Ono
- Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION
- Applicant Address: JP Tokyo
- Assignee: HITACHI HIGH-TECH CORPORATION
- Current Assignee: HITACHI HIGH-TECH CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Baker Botts L.L.P.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@3c68ee32
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/67 ; H01L21/3065 ; H01L21/3213 ; H01L21/311 ; H01J37/32
Abstract:
The present invention provides a plasma processing apparatus having a radio frequency power supply supplying time-modulated radio frequency power which is controllable widely with high precision, and a plasma processing method using the plasma processing apparatus. The plasma processing apparatus includes: a vacuum chamber; a first radio frequency power supply for generating plasma in the vacuum chamber; a sample holder disposed in the vacuum chamber, on which a sample is placed; and a second radio frequency power supply supplying radio frequency power to the sample holder, wherein at least one of the first radio frequency power supply and the second radio frequency power supply supplies time-modulated radio frequency power, one of parameters of controlling the time-modulation has two or more different control ranges, and one of the control ranges is a control range for a high-precision control.
Public/Granted literature
- US20170025289A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD Public/Granted day:2017-01-26
Information query
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