- 专利标题: Notch treatment methods for flaw simulation
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申请号: US16124762申请日: 2018-09-07
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公开(公告)号: US10732085B2公开(公告)日: 2020-08-04
- 发明人: Xiaoming Li , Bogdan R. Krasnowski , Robert A. Figueroa , Robert Wardlaw
- 申请人: Bell Helicopter Textron Inc.
- 申请人地址: US TX Fort Worth
- 专利权人: Bell Helicopter Textron Inc.
- 当前专利权人: Bell Helicopter Textron Inc.
- 当前专利权人地址: US TX Fort Worth
- 代理机构: Timmer Law Group, PLLC
- 主分类号: G01N3/62
- IPC分类号: G01N3/62 ; G01N3/02 ; G06F30/15 ; G06F119/18
摘要:
A notch treatment method for flaw simulation including providing the specimen with the notch, the notch having a re-melt material layer; isolating the notch; and selectively etching the notch to provide an etched surface of the notch; wherein at least a portion of the re-melt material layer has been removed from the notch. In one aspect, there is provided a notch treatment method for flaw simulation including providing the specimen with the notch, the notch having a re-melt material layer, the specimen includes steel or an alloy thereof; isolating the notch; and selectively etching the notch with a first etching solution and a second etching solution to provide an etched surface on the notch; wherein at least a portion of the re-melt material layer has been removed from the notch.
公开/授权文献
- US20200025661A1 NOTCH TREATMENT METHODS FOR FLAW SIMULATION 公开/授权日:2020-01-23
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