Invention Grant
- Patent Title: Techniques for detecting micro-arcing occurring inside a semiconductor processing chamber
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Application No.: US16705437Application Date: 2019-12-06
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Publication No.: US10734206B2Publication Date: 2020-08-04
- Inventor: Feng-Kuang Wu , Chih-Kuo Chang , Hsu-Shui Liu , Jiun-Rong Pai , Shou-Wen Kuo , Sing-Tsung Li
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: H01J37/32
- IPC: H01J37/32

Abstract:
Some embodiments relate to a system. The system includes a radio frequency (RF) generator configured to output a RF signal. A transmission line is coupled to the RF generator. A plasma chamber is coupled to RF generator via the transmission line, wherein the plasma chamber is configured to generate a plasma based on the RF signal. A micro-arc detecting element is configured to determine whether a micro-arc has occurred in the plasma chamber based on the RF signal.
Public/Granted literature
- US20200111652A1 TECHNIQUES FOR DETECTING MICRO-ARCING OCCURRING INSIDE A SEMICONDUCTOR PROCESSING CHAMBER Public/Granted day:2020-04-09
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