Invention Grant
- Patent Title: High mobility asymmetric field effect transistors with a band-offset semiconductor drain spacer
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Application No.: US16077742Application Date: 2016-03-31
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Publication No.: US10734511B2Publication Date: 2020-08-04
- Inventor: Cheng-Ying Huang , Willy Rachmady , Jack T. Kavalieros , Matthew V. Metz , Benjamin Chu-Kung , Gilbert Dewey , Rafael Rios
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Trop, Pruner & Hu, P.C.
- International Application: PCT/US2016/025441 WO 20160331
- International Announcement: WO2017/171824 WO 20171005
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/66 ; H01L29/78 ; H01L29/205 ; H01L29/739 ; H01L29/08
Abstract:
An embodiment includes a field effect transistor, comprising: a source region comprising a first III-V material doped to a first conductivity type; a drain region comprising a second III-V material doped to a second conductivity type that is opposite the first conductivity type; a gate electrode disposed over a channel region comprising a third III-V material; and a first spacer, between the channel and drain regions, comprising a fourth III-V material having a charge carrier-blocking band offset from the third III-V material. Other embodiments are described herein.
Public/Granted literature
- US20190035921A1 HIGH MOBILITY ASYMMETRIC FIELD EFFECT TRANSISTORS WITH A BAND-OFFSET SEMICONDUCTOR DRAIN SPACER Public/Granted day:2019-01-31
Information query
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