Invention Grant
- Patent Title: Sensing circuit with adaptive local reference generation of resistive memory and sensing method thereof
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Application No.: US16504351Application Date: 2019-07-08
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Publication No.: US10748612B1Publication Date: 2020-08-18
- Inventor: Wei-Yu Lin , Meng-Fan Chang
- Applicant: NATIONAL TSING HUA UNIVERSITY
- Applicant Address: TW Hsinchu
- Assignee: NATIONAL TSING HUA UNIVERSITY
- Current Assignee: NATIONAL TSING HUA UNIVERSITY
- Current Assignee Address: TW Hsinchu
- Agency: CKC & Partners Co., LLC
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C13/00 ; G11C7/10 ; G11C7/08

Abstract:
A sensing circuit with adaptive local reference generation of a resistive memory is configured to adaptively sense a first bit line current of a first bit line and a second bit line current of a second bit line via one sense amplifier. The sense amplifier has a first output node and a second output node. The adaptive local reference generator is electrically connected to the sense amplifier and generating a reference current equal to a sum of the second bit line current and a local reference current. A first bit line current flows through the first output node during a first bit line time interval. A second bit line current flows through the first output node during a second bit line time interval. The first bit line time interval is different from the second bit line time interval.
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