- 专利标题: Integrated semiconductor assemblies and methods of manufacturing the same
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申请号: US15683609申请日: 2017-08-22
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公开(公告)号: US10748872B2公开(公告)日: 2020-08-18
- 发明人: Thomas H. Kinsley
- 申请人: Micron Technology, Inc.
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Perkins Coie LLP
- 主分类号: H01L25/065
- IPC分类号: H01L25/065 ; H01L23/00 ; H01L23/31 ; H01L23/495 ; H01L23/48 ; H01L25/00 ; H01L23/13 ; H01L23/498 ; H01L21/56
摘要:
Integrated semiconductor assemblies and associated methods of manufacturing are disclosed herein. In one embodiment, a semiconductor device assembly comprises a base substrate having a cavity and a perimeter region at least partially surrounding the cavity. The cavity is defined by sidewalls extending at least partially through the substrate. The assembly further comprises a first die attached to the base substrate at the cavity, and a second die over at least a portion of the first die and attached to the base substrate at the perimeter region. In some embodiments, the first and second dies can be electrically coupled to each other via circuitry of the substrate.
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