- 专利标题: Methods and apparatus related to termination regions of a semiconductor device
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申请号: US16234844申请日: 2018-12-28
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公开(公告)号: US10749027B2公开(公告)日: 2020-08-18
- 发明人: Joseph A. Yedinak , Richard Stokes , Jason Higgs , Fred Session
- 申请人: FAIRCHILD SEMICONDUCTOR CORPORATION
- 申请人地址: US AZ Phoenix
- 专利权人: Fairchild Semiconductor Corporation
- 当前专利权人: Fairchild Semiconductor Corporation
- 当前专利权人地址: US AZ Phoenix
- 代理机构: Brake Hughes Bellermann LLP
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; H01L29/06 ; H01L29/40 ; H01L29/423 ; H01L21/02 ; H01L29/739
摘要:
In one general aspect, an apparatus can include a semiconductor region, and a trench defined within the semiconductor region. The trench can have a depth aligned along a vertical axis and have a length aligned along a longitudinal axis orthogonal to the vertical axis. The trench can have a first portion of the length included in a termination region of the semiconductor region and can have a second portion of the length included in an active region of the semiconductor region.