Invention Grant
- Patent Title: Semiconductor device, pH sensor, biosensor, and manufacturing method for semiconductor device
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Application No.: US16251608Application Date: 2019-01-18
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Publication No.: US10749035B2Publication Date: 2020-08-18
- Inventor: Makoto Nakazumi , Yasutaka Nishi
- Applicant: NIKON CORPORATION
- Applicant Address: JP Tokyo
- Assignee: NIKON CORPORATION
- Current Assignee: NIKON CORPORATION
- Current Assignee Address: JP Tokyo
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@785c1be7
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L21/02 ; G01N27/414 ; H01L27/12 ; H01L27/32 ; H01L29/417
Abstract:
There is provided a semiconductor device including: a first electrode; a second electrode; and a semiconductor layer in contact with the first electrode and the second electrode, in which the semiconductor layer is a spinel-type oxide containing zinc (Zn) and gallium (Ga).
Public/Granted literature
- US20190181268A1 SEMICONDUCTOR DEVICE, PH SENSOR, BIOSENSOR, AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE Public/Granted day:2019-06-13
Information query
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