Invention Grant
- Patent Title: Method of forming a P-type layer for a light emitting device
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Application No.: US15592658Application Date: 2017-05-11
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Publication No.: US10749070B2Publication Date: 2020-08-18
- Inventor: Isaac Wildeson , Erik Charles Nelson , Parijat Deb
- Applicant: Lumileds LLC
- Applicant Address: US CA San Jose
- Assignee: LUMILEDS LLC
- Current Assignee: LUMILEDS LLC
- Current Assignee Address: US CA San Jose
- Agency: Servilla Whitney LLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@1624700e
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/02 ; H01L33/22 ; H01L33/30 ; H01L27/15 ; H01L33/04 ; H01L33/24
Abstract:
In a method according to embodiments of the invention, a semiconductor structure including a III-nitride light emitting layer disposed between a p-type region and an n-type region is grown. The p-type region is buried within the semiconductor structure. A trench is formed in the semiconductor structure. The trench exposes the p-type region. After forming the trench, the semiconductor structure is annealed.
Public/Granted literature
- US20170338373A1 METHOD OF FORMING A P-TYPE LAYER FOR A LIGHT EMITTING DEVICE Public/Granted day:2017-11-23
Information query
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