Invention Grant
- Patent Title: Power circuit and power module using MISFET having control circuit disposed between gate and source
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Application No.: US16393095Application Date: 2019-04-24
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Publication No.: US10749520B2Publication Date: 2020-08-18
- Inventor: Hirotaka Otake , Tatsuya Yanagi , Yusuke Nakakohara
- Applicant: ROHM CO., LTD.
- Applicant Address: JP Kyoto
- Assignee: ROHM CO., LTD.
- Current Assignee: ROHM CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: Hamre, Schumann, Mueller & Larson, P.C.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@53e1d335
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H03K17/16 ; H01L23/552 ; H01L29/66 ; H01L29/78 ; H01L25/18 ; H01L25/16 ; H01L25/07 ; H01L23/10 ; H01L29/16 ; H03K17/041 ; H01L23/498 ; H01L23/31

Abstract:
The power circuit includes: a main substrate; a first electrode pattern disposed on the main substrate and connected to a positive-side power terminal P; a second electrode pattern disposed on a main substrate and connected to a negative-side power terminal N; a third electrode pattern disposed on the main substrate and connected to an output terminal O; a first MISFET Q1 of which a first drain is disposed on the first electrode pattern; a second MISFET Q4 of which a second drain is disposed on the third electrode pattern; a first control circuit (DG1) connected between a first gate G1 and a first source S1 of the first MISFET, and configured to control a current path conducted from the first source towards the first gate.
Public/Granted literature
- US20190253047A1 POWER CIRCUIT AND POWER MODULE USING MISFET HAVING CONTROL CIRCUIT DISPOSED BETWEEN GATE AND SOURCE Public/Granted day:2019-08-15
Information query
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