Invention Grant
- Patent Title: Apparatuses and methods for providing constant DQS-DQ delay in a memory device
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Application No.: US16508044Application Date: 2019-07-10
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Publication No.: US10755756B2Publication Date: 2020-08-25
- Inventor: Yantao Ma , Huy T. Vo
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Main IPC: G11C7/10
- IPC: G11C7/10 ; G11C7/22 ; G11C7/20

Abstract:
Apparatuses and methods for creating a constant DQS-DQ delay in a memory device are described. An example apparatus includes a first adjustable delay line configured to provide a delay corresponding to a loop delay of a data strobe signal pathway internal to a memory, a second adjustable delay line included in the internal data strobe signal pathway, and a timing control circuit coupled to the first and second adjustable delay lines and configured to adjust a delay of the second adjustable delay line responsive to output from the first adjustable delay line and the data strobe signal pathway.
Public/Granted literature
- US20190333554A1 APPARATUSES AND METHODS FOR PROVIDING CONSTANT DQS-DQ DELAY IN A MEMORY DEVICE Public/Granted day:2019-10-31
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