- 专利标题： Method of forming photonics structures
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申请号： US16015778申请日： 2018-06-22
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公开(公告)号： US10761275B2公开(公告)日： 2020-09-01
- 发明人: Gurtej Sandhu
- 申请人： Micron Technology, Inc.
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Perkins Coie LLP
- 主分类号： H01L27/06
- IPC分类号： H01L27/06 ; H01L31/02 ; H01L31/18 ; G02B6/42 ; G02B6/122 ; H01L31/0232 ; H01L21/324 ; G02B6/12
摘要：
The disclosed embodiments relate to an integrated circuit structure and methods of forming them in which photonic devices are formed on the back end of fabricating a CMOS semiconductor structure containing electronic devices. Doped regions associated with the photonic devices are formed using microwave annealing for dopant activation.
公开/授权文献
- US20180299626A1 METHOD OF FORMING PHOTONICS STRUCTURES 公开/授权日：2018-10-18
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