Invention Grant
- Patent Title: Adjustment of a pre-read operation associated with a write operation
-
Application No.: US16057537Application Date: 2018-08-07
-
Publication No.: US10761754B2Publication Date: 2020-09-01
- Inventor: Zhenlei E. Shen , Zhengang Chen , Tingjun Xie , Jiangli Zhu
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Lowenstein Sandler LLP
- Main IPC: G06F3/06
- IPC: G06F3/06 ; G11C13/00

Abstract:
Data can be received at a memory sub-system. A characteristic of the memory sub-system can be identified. A read voltage level can be determined based on the characteristic of the memory sub-system. A read operation can be performed at the memory sub-system based on the read voltage level to retrieve stored data. The received data can be stored at the memory sub-system based on the stored data that was retrieved from the read operation that is based on the read voltage level.
Public/Granted literature
- US20200050383A1 ADJUSTMENT OF A PRE-READ OPERATION ASSOCIATED WITH A WRITE OPERATION Public/Granted day:2020-02-13
Information query