Invention Grant
- Patent Title: Group III nitride based high electron mobility transistors
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Application No.: US16701951Application Date: 2019-12-03
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Publication No.: US10763348B2Publication Date: 2020-09-01
- Inventor: Krishna Kumar Manippady , Surani Bin Dolmanan , Kaixin Vivian Lin , Hui Ru Tan , Sudhiranjan Tripathy
- Applicant: Agency for Science, Technology and Research
- Applicant Address: SG Singapore
- Assignee: Agency for Science, Technology and Research
- Current Assignee: Agency for Science, Technology and Research
- Current Assignee Address: SG Singapore
- Agency: Schwegman Lundberg & Woessner, P.A.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@578b4354
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L29/778 ; H01L21/02 ; C30B25/02 ; C30B29/40 ; H01L29/66 ; H01L29/20
Abstract:
The invention provides a product and a manufacturing process for a high power semiconductor device. The semiconductor device comprises a GaN/AlGaN epilayer structure on an SOI substrate with a thick, uninterrupted GaN layer for use in high-power applications.
Public/Granted literature
- US20200105915A1 GROUP III NITRIDE BASED HIGH ELECTRON MOBILITY TRANSISTORS Public/Granted day:2020-04-02
Information query
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