- 专利标题: Semiconductor device with selective dielectric deposition
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申请号: US16427779申请日: 2019-05-31
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公开(公告)号: US10777411B1公开(公告)日: 2020-09-15
- 发明人: Son Nguyen , Benjamin D. Briggs , Huai Huang
- 申请人: International Business Machines Corporation
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Ryan, Mason & Lewis, LLP
- 代理商 Vazken Alexanian
- 主分类号: H01L21/027
- IPC分类号: H01L21/027 ; H01L21/02
摘要:
Techniques are provided to fabricate semiconductor devices. For example, a semiconductor device can include a substrate including a central portion and a pair of outer portions. A first self-assembled monolayer is attached to the central portion of the substrate. A second self-assembled monolayer is attached to the first self-assembled monolayer. A first dielectric layer is disposed on each of the outer portions. A second dielectric layer is disposed on the first dielectric layer.
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