- 专利标题: Thin film transistor, method of manufacturing thin film transistor, array substrate and display panel
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申请号: US16403860申请日: 2019-05-06
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公开(公告)号: US10777683B2公开(公告)日: 2020-09-15
- 发明人: Yang Zhang , Luke Ding , Bin Zhou , Haitao Wang , Ning Liu , Jingang Fang , Yongchao Huang , Liangchen Yan
- 申请人: Hefei Xinsheng Optoelectronics Technology Co., Ltd. , BOE Technology Group Co., Ltd.
- 申请人地址: CN Anhui CN Beijing
- 专利权人: HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.,BOE TECHNOLOGY GROUP CO., LTD.
- 当前专利权人: HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.,BOE TECHNOLOGY GROUP CO., LTD.
- 当前专利权人地址: CN Anhui CN Beijing
- 代理机构: Westman, Champlin & Koehler, P.A.
- 优先权: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@2529e968
- 主分类号: H01L29/786
- IPC分类号: H01L29/786 ; H01L27/12 ; H01L29/66 ; H01L27/32
摘要:
A thin film transistor, a method of manufacturing the same, an array substrate and a display panel are disclosed. The thin film transistor includes a light blocking layer, an electrode layer, and a combination layer, which are sequentially stacked. The electrode layer includes a gate electrode, a source electrode and a drain electrode which are separated from one another, and the gate electrode is located between the source electrode and the drain electrode. The light blocking layer includes a first portion of which an orthogonal projection is located between an orthogonal projection of the gate electrode and an orthogonal projection of the source electrode; and a second portion of which an orthogonal projection is located between the orthogonal projection of the gate and an orthogonal projection of the drain. The combination layer includes an active layer.
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