A method, including: measuring a first plurality of instances of a metrology target on a substrate processed using a patterning process to determine values of at least one parameter of the patterning process using a first metrology recipe for applying radiation to, and detecting radiation from, instances of the metrology target; and measuring a second different plurality of instances of the metrology target on the same substrate to determine values of the at least one parameter of the patterning process using a second metrology recipe for applying radiation to, and detecting radiation from, instances of the metrology target, wherein the second metrology recipe differs from the first metrology recipe in at least one characteristic of the applying radiation to, and detecting radiation from, instances of the metrology target.