Invention Grant
- Patent Title: 3D defect characterization of crystalline samples in a scanning type electron microscope
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Application No.: US16119017Application Date: 2018-08-31
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Publication No.: US10784076B2Publication Date: 2020-09-22
- Inventor: Tomá{hacek over (s)} Vystav{hacek over (e)}l , Bohuslav Sed'a , Anna Prokhodtseva
- Applicant: FEI Company
- Applicant Address: US OR Hillsboro
- Assignee: FEI Company
- Current Assignee: FEI Company
- Current Assignee Address: US OR Hillsboro
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@4c2cbced
- Main IPC: H01J37/20
- IPC: H01J37/20 ; H01J37/22 ; H01J37/244 ; H01J37/06 ; H01J37/28

Abstract:
The invention relates to a method 3D defect characterization of crystalline samples in a scanning type electron microscope. The method comprises Irradiating a sample provided on a stage, selecting one set of crystal lattice planes of the sample and orienting said set to a first Bragg condition with respect to a primary electron beam impinging on said sample, and obtaining Electron Channeling Contrast Image for an area of interest on the sample. The method is characterized by performing, at least once, the steps of orienting said selected set of crystal lattice planes to a further Bragg condition by at least tilting the sample stage with the sample by a user-selected angle about a first tilt axis, and obtaining by Electron Channeling Contrast Image for a further area of interest.
Public/Granted literature
- US20200013581A1 3D DEFECT CHARACTERIZATION OF CRYSTALLINE SAMPLES IN A SCANNING TYPE ELECTRON MICROSCOPE Public/Granted day:2020-01-09
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