- 专利标题： Method of depositing charge trapping polycrystalline silicon films on silicon substrates with controllable film stress
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申请号： US16720136申请日： 2019-12-19
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公开(公告)号： US10784146B2公开(公告)日： 2020-09-22
- 发明人: Gang Wang , Jeffrey L. Libbert , Shawn George Thomas , Igor Peidous
- 申请人： GlobalWafers Co., Ltd
- 申请人地址： TW Hsinchu
- 专利权人： GLOBALWAFERS CO., LTD.
- 当前专利权人： GLOBALWAFERS CO., LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Armstrong Teasdale LLP
- 主分类号： H01L27/12
- IPC分类号： H01L27/12 ; H01L21/763 ; H01L21/02 ; H01L21/762
摘要：
A semiconductor on insulator multilayer structure is provided. The multilayer comprises a high resistivity single crystal semiconductor handle substrate, a textured oxide, nitride, or oxynitride layer, a polycrystalline silicon layer, a dielectric layer, and a single crystal semiconductor device layer. The multilayer structure is prepared in a manner that reduces wafer bow.
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