Invention Grant
- Patent Title: Semiconductor device having voids and method of forming same
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Application No.: US16390715Application Date: 2019-04-22
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Publication No.: US10784160B2Publication Date: 2020-09-22
- Inventor: Yung-Hsu Wu , Chien-Hua Huang , Chung-Ju Lee , Tien-I Bao , Shau-Lin Shue
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/522 ; H01L23/532

Abstract:
A method embodiment includes forming a hard mask over a dielectric layer and forming a first metal line and a second metal line extending through the hard mask into the dielectric layer. The method further includes removing the hard mask, wherein removing the hard mask defines an opening between the first metal line and the second metal line. A liner is then formed over the first metal line, the second metal line, and the dielectric layer, wherein the liner covers sidewalls and a bottom surface of the opening.
Public/Granted literature
- US20190252249A1 Semiconductor Device having Voids and Method of Forming Same Public/Granted day:2019-08-15
Information query
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