Invention Grant
- Patent Title: Apparatus and manufacturing method
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Application No.: US15905044Application Date: 2018-02-26
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Publication No.: US10784181B2Publication Date: 2020-09-22
- Inventor: HuiLi Fu , Jyh Rong Lin , Shujie Cai
- Applicant: Huawei Technologies Co., Ltd.
- Applicant Address: CN Shenzhen
- Assignee: HUAWEI TECHNOLOGIES CO., LTD.
- Current Assignee: HUAWEI TECHNOLOGIES CO., LTD.
- Current Assignee Address: CN Shenzhen
- Agency: Conley Rose, P.C.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@18b7fb87
- Main IPC: H01L23/373
- IPC: H01L23/373 ; H01L23/42 ; H01L21/48 ; H01L23/367

Abstract:
An apparatus includes a circuit device, a heat sink fin, and a thermal interface material layer. The thermal interface material layer is thermally coupled to the circuit device and the heat sink fin. The thermal interface material layer includes a first alloy layer, a nanometal particle layer, and a second alloy layer. The first alloy layer is thermally coupled to the circuit device. The nanometal particle layer is thermally coupled to the first alloy layer. The nanometal particle layer includes nanometal particles and an intermediate mixture.
Public/Granted literature
- US20180190566A1 Apparatus and Manufacturing Method Public/Granted day:2018-07-05
Information query
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