Invention Grant
- Patent Title: Semiconductor devices having 3-dimensional inductive structures
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Application No.: US16183057Application Date: 2018-11-07
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Publication No.: US10784192B2Publication Date: 2020-09-22
- Inventor: James E. Davis , Kevin G. Duesman
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Perkins Coie LLP
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L23/528 ; H01L23/532 ; H01L23/66 ; H01L23/62 ; H01L49/02 ; H01L23/64 ; H01L27/11578 ; H01L27/11551

Abstract:
Semiconductor devices having inductive structures, and associated systems and methods, are disclosed herein. In one embodiment, a semiconductor device includes a substrate and at least one circuit component coupled to the substrate. The semiconductor device can further include an inductive structure carried by the substrate and having a stack of alternating first and second layers. In some embodiments, the first layers comprise an oxide material and the second layers each include a coil of conductive material. The coils of conductive material can be electrically coupled (a) together to form an inductor and (b) to the at least one circuit component.
Public/Granted literature
- US20200144182A1 SEMICONDUCTOR DEVICES HAVING 3-DIMENSIONAL INDUCTIVE STRUCTURES Public/Granted day:2020-05-07
Information query
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