Invention Grant
- Patent Title: Method of manufacturing a capacitor
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Application No.: US16129782Application Date: 2018-09-12
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Publication No.: US10784334B2Publication Date: 2020-09-22
- Inventor: Feng-Yi Chang , Fu-Che Lee
- Applicant: UNITED MICROELECTRONICS CORP. , Fujian Jinhua Integrated Circuit Co., Ltd.
- Applicant Address: TW Hsin-Chu CN Quanzhou, Funjian Province
- Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee Address: TW Hsin-Chu CN Quanzhou, Funjian Province
- Agent Winston Hsu
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@9207d77
- Main IPC: H01L27/00
- IPC: H01L27/00 ; H01L49/02 ; H01L27/108

Abstract:
The present invention discloses a method of manufacturing a capacitor, which includes the steps of forming a capacitor recess in a sacrificial layer, wherein the sidewall of capacitor recess has a wave profile, forming a bottom electrode layer on the sidewall of capacitor recess, filling up the capacitor recess with a supporting layer, removing the sacrificial layer to forma capacitor pillar made up by the bottom electrode layer and the supporting layer, forming a capacitor dielectric layer on the capacitor pillar, and forming a top electrode layer on the capacitor dielectric layer.
Public/Granted literature
- US20190123135A1 METHOD OF MANUFACTURING A CAPACITOR Public/Granted day:2019-04-25
Information query
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