- 专利标题: Transformer based gate drive circuit
-
申请号: US16520253申请日: 2019-07-23
-
公开(公告)号: US10784859B2公开(公告)日: 2020-09-22
- 发明人: Sriram Chandrasekaran , Michael S. Hockema
- 申请人: Raytheon Company
- 申请人地址: US MA Waltham
- 专利权人: Raytheon Company
- 当前专利权人: Raytheon Company
- 当前专利权人地址: US MA Waltham
- 主分类号: H03K17/687
- IPC分类号: H03K17/687 ; H03F3/217 ; H03K17/06 ; H03K17/691 ; H02M3/07 ; H03K17/567 ; H01L29/16
摘要:
A gate drive circuit for generating asymmetric drive voltages comprises a gate drive transformer comprising: a primary winding responsive to a pulse width module (PWM) input signal to generate a bipolar signal having a positive bias voltage and a negative bias voltage; and a secondary winding responsive to the bipolar signal to generate a PWM output signal. A first charge pump is connected to the secondary winding responsive to the PWM output signal to generate a level shifted PWM output signal. A second charge pump is connected to the secondary winding to generate a readjusted PWM output signal by decreasing at least a portion of the level shifted PWM output signal. A gate switching device is connected to the first charge pump and second charge pump. A level shifted PWM output signal establishes an ON condition and the readjusted PWM output signal establishes an OFF condition of the gate MOSFET.
公开/授权文献
- US20200106436A1 Transformer Based Gate Drive Circuit 公开/授权日:2020-04-02
信息查询
IPC分类: