Method of detecting size of pattern formed by photolithography
摘要:
The present invention provides a method for detecting a size of a pattern made by photolithography, which being applied for detecting a size of a pattern formed on an array substrate of a liquid crystal display including: deriving function layer parameters and position parameters of a detection-pattern; deriving a thickness-profile of the detection-pattern according to the function layer parameters and the position parameters of the detection-pattern; deriving a plane-profile of the detection-pattern according to the thickness-profile of the detection-pattern; proceeding a size-detection to the plane-profile of the detection-pattern.
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