- 专利标题: Method of detecting size of pattern formed by photolithography
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申请号: US14893532申请日: 2015-08-18
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公开(公告)号: US10788756B2公开(公告)日: 2020-09-29
- 发明人: Kuanju Fu , Caiqin Chen , Zhonglai Wang
- 申请人: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD. , WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
- 申请人地址: CN Wuhan, Hubei
- 专利权人: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
- 当前专利权人: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
- 当前专利权人地址: CN Wuhan, Hubei
- 代理机构: Soroker Agmon Nordman
- 优先权: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@c108a1b
- 国际申请: PCT/CN2015/087349 WO 20150818
- 国际公布: WO2017/020348 WO 20170209
- 主分类号: G03F7/20
- IPC分类号: G03F7/20 ; G01B21/08 ; G02F1/1362 ; G03F1/44
摘要:
The present invention provides a method for detecting a size of a pattern made by photolithography, which being applied for detecting a size of a pattern formed on an array substrate of a liquid crystal display including: deriving function layer parameters and position parameters of a detection-pattern; deriving a thickness-profile of the detection-pattern according to the function layer parameters and the position parameters of the detection-pattern; deriving a plane-profile of the detection-pattern according to the thickness-profile of the detection-pattern; proceeding a size-detection to the plane-profile of the detection-pattern.
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