Invention Grant
- Patent Title: Formation of lead-free perovskite film
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Application No.: US15752947Application Date: 2016-09-07
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Publication No.: US10790096B2Publication Date: 2020-09-29
- Inventor: Yabing Qi , Min-cherl Jung , Sonia Ruiz Raga
- Applicant: OKINAWA INSTITUTE OF SCIENCE AND TECHNOLOGY SCHOOL CORPORATION
- Applicant Address: JP Okinawa
- Assignee: OKINAWA INSTITUTE OF SCIENCE AND TECHNOLOGY SCHOOL CORPORATION
- Current Assignee: OKINAWA INSTITUTE OF SCIENCE AND TECHNOLOGY SCHOOL CORPORATION
- Current Assignee Address: JP Okinawa
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- International Application: PCT/JP2016/004088 WO 20160907
- International Announcement: WO2017/043084 WO 20170316
- Main IPC: H01G9/20
- IPC: H01G9/20 ; C23C14/24 ; H01L51/42 ; C23C14/06 ; C23C14/58 ; H01L51/00

Abstract:
A method of forming a Pb-free perovskite film is provided, the method based on vacuum evaporation and comprising: first depositing a first material comprising Sn halide on a substrate to form a first layer; second depositing a second material comprising organic halide to form a second layer on the first layer to obtain a sequentially-deposited two-layer film on the substrate; and annealing the sequentially-deposited two-layer film on the substrate. During the annealing, the first and second materials inter-diffuse and react to form the Pb-free perovskite film. The second layer is formed to cover the first layer so as to prevent the first layer from air exposure. The solar cell device including the Pb-free perovskite film formed by using the present method exhibits good stability.
Public/Granted literature
- US20180247769A1 FORMATION OF LEAD-FREE PEROVSKITE FILM Public/Granted day:2018-08-30
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