Invention Grant
- Patent Title: Silicon carbide semiconductor device and method of manufacturing the same
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Application No.: US16278314Application Date: 2019-02-18
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Publication No.: US10790201B2Publication Date: 2020-09-29
- Inventor: Akira Amano , Takayuki Satomura , Yuichi Takeuchi , Katsumi Suzuki , Sachiko Aoi
- Applicant: DENSO CORPORATION , TOYOTA JIDOSHA KABUSHIKI KAISHA
- Applicant Address: JP Kariya JP Toyota-shi
- Assignee: DENSO CORPORATION,TOYOTA JIDOSHA KABUSHIKI KAISHA
- Current Assignee: DENSO CORPORATION,TOYOTA JIDOSHA KABUSHIKI KAISHA
- Current Assignee Address: JP Kariya JP Toyota-shi
- Agency: Posz Law Group, PLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@37553f29
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/66 ; H01L29/78 ; G01B11/06 ; H01L29/12 ; H01L21/265 ; H01L29/16 ; H01L29/66
Abstract:
When a film thickness of a second epitaxial film is measured, an infrared light is irradiated from a surface side of the second epitaxial film onto a base layer on which a first epitaxial film and the second epitaxial film are formed. A reflected light from an interface between the first epitaxial film and the base layer and a reflected light from a surface of the second epitaxial film are measured to obtain a two-layer film thickness, which is a total film thickness of the first epitaxial film and the second epitaxial film. The film thickness of the second epitaxial film is calculated by subtracting a one-layer film thickness, which is a film thickness of the first epitaxial film, from the two-layer film thickness.
Public/Granted literature
- US20190181239A1 SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2019-06-13
Information query
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