Invention Grant
- Patent Title: Semiconductor device including vertical field effect transistors having different gate lengths
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Application No.: US16275761Application Date: 2019-02-14
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Publication No.: US10790278B2Publication Date: 2020-09-29
- Inventor: Mingyu Kim , Kang-Ill Seo
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L29/423 ; H01L29/66 ; H01L21/8234 ; H01L21/308 ; H01L29/78
Abstract:
A semiconductor device including a semiconductor substrate having a recessed top portion and a non-recessed top portion, a first fin protruding upward from a non-recessed top portion with a first thickness, a second fin protruding upward from the recessed top portion with a second thickness greater than the first thickness, a first gate structure on the non-recessed top portion and surrounding the first fin to a first height from the non-recessed top portion, and a second gate structure on the recessed top portion and surrounding the second fin to a second height different from the first height from the recessed top portion may be provided.
Public/Granted literature
- US20200020685A1 SEMICONDUCTOR DEVICE INCLUDING VERTICAL FIELD EFFECT TRANSISTORS HAVING DIFFERENT GATE LENGTHS Public/Granted day:2020-01-16
Information query
IPC分类:
