- 专利标题: Power semiconductor device having overvoltage protection
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申请号: US16402712申请日: 2019-05-03
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公开(公告)号: US10790384B2公开(公告)日: 2020-09-29
- 发明人: Markus Beninger-Bina , Thomas Basler , Matteo Dainese , Hans-Joachim Schulze
- 申请人: Infineon Technologies Austria AG
- 申请人地址: AT
- 专利权人: Infineon Technologies Austria AG
- 当前专利权人: Infineon Technologies Austria AG
- 当前专利权人地址: AT
- 代理机构: Design IP
- 优先权: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@4160742c com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@a44abd4
- 主分类号: H01L29/73
- IPC分类号: H01L29/73 ; H01L29/04 ; H01L29/08 ; H01L29/10 ; H01L29/32 ; H01L29/36 ; H01L29/423 ; H01L29/66 ; H01L29/80 ; H01L27/07 ; H01L29/739 ; H01L29/808 ; H01L27/02 ; H01L29/861 ; H01L29/74 ; H01L29/16
摘要:
A chip includes a semiconductor body coupled to a first and a second load terminal. The semiconductor body includes an active region including a plurality of breakthrough cells, each of the breakthrough cells includes: an insulation structure; a drift region; an anode region, the anode region being electrically connected to the first load terminal and disposed in contact with the first load terminal; a first barrier region arranged in contact with each of the anode region and the insulation structure, where the first barrier region of the plurality of breakthrough cells forms a contiguous semiconductor layer; a second barrier region separating each of the anode region and at least a part of the first barrier region from the drift region; and a doped contact region arranged in contact with the second load terminal, where the drift region is positioned between the second barrier region and the doped contact region.
公开/授权文献
- US20190259863A1 POWER SEMICONDUCTOR DEVICE 公开/授权日:2019-08-22
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