Invention Grant
- Patent Title: Smart bypass diode bridge rectifiers
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Application No.: US15437998Application Date: 2017-02-21
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Publication No.: US10790996B2Publication Date: 2020-09-29
- Inventor: Vigneshwara Upadhyaya , Unnikrishnan Puthanveedu , Hemanth Maddhula , Arunachalaprabhu Gunasekaran
- Applicant: Hewlett Packard Enterprise Development LP
- Applicant Address: US TX Houston
- Assignee: Hewlett Packard Enterprise Development LP
- Current Assignee: Hewlett Packard Enterprise Development LP
- Current Assignee Address: US TX Houston
- Agency: Brooks, Cameron & Huebsch, PLLC
- Main IPC: H04L12/10
- IPC: H04L12/10 ; H04L12/40

Abstract:
Example implementations relate to smart bypass diode bridge rectifiers. For example, a device can include a power over Ethernet input. In some examples, the device can include a plurality of smart bypass diodes connected to the power over Ethernet input to form a bridge rectifier. In some examples, the device can also include a powered device connected to the bridge rectifier.
Public/Granted literature
- US20180241578A1 SMART BYPASS DIODE BRIDGE RECTIFIERS Public/Granted day:2018-08-23
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