Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16378654Application Date: 2019-04-09
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Publication No.: US10797036B2Publication Date: 2020-10-06
- Inventor: Takuo Nagase
- Applicant: DENSO CORPORATION
- Applicant Address: JP Kariya
- Assignee: DENSO CORPORATION
- Current Assignee: DENSO CORPORATION
- Current Assignee Address: JP Kariya
- Agency: Posz Law Group, PLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@384708f6
- Main IPC: H01L25/18
- IPC: H01L25/18 ; H02M1/08 ; H02M7/00 ; H02M7/5395 ; H01L25/07 ; H02M7/5387

Abstract:
A semiconductor device includes a first semiconductor chip formed with an IGBT, a second semiconductor chip formed with a MOSFET, a first metal member electrically connected to a collector electrode and a drain electrode, and a second metal member electrically connected to an emitter electrode and a source electrode. The IGBT and the MOSFET connected in parallel to each other are turned on in the order of the IGBT and the MOSFET, and turned off in the order of the MOSFET and the IGBT. The second metal member has a main body portion on which the first and second semiconductor chips are mounted, and a joint portion as a terminal portion connected to the main body portion. In a plan view, a shortest distance between the joint portion and the first semiconductor chip is shorter than a shortest distance between the joint portion and the second semiconductor chip.
Public/Granted literature
- US20190237453A1 SEMICONDUCTOR DEVICE Public/Granted day:2019-08-01
Information query
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