Invention Grant
- Patent Title: Memory devices with three-dimensional structure
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Application No.: US16030170Application Date: 2018-07-09
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Publication No.: US10797066B2Publication Date: 2020-10-06
- Inventor: Youn-Yeol Lee , Chanho Kim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@3c6ea457
- Main IPC: H01L27/11575
- IPC: H01L27/11575 ; H01L27/11573 ; H01L27/11582 ; H01L27/1157 ; G11C16/04

Abstract:
A memory device includes a substrate, a first memory structure including a plurality of first word lines stacked on the substrate in a direction perpendicular to a top surface of the substrate, an inter-metal layer on the first memory structure and including a plurality of intermediate pads connected with separate, respective first word lines of the plurality of first word lines, a second memory structure including a plurality of second word lines stacked on the inter-metal layer in the direction perpendicular to the top surface of the substrate, and an upper metal layer on the second memory structure and including a plurality of upper pads connected with separate, respective second word lines of the plurality of second word lines.
Public/Granted literature
- US20190189632A1 MEMORY DEVICES WITH THREE-DIMENSIONAL STRUCTURE Public/Granted day:2019-06-20
Information query
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